Section: “Nanoelectronics and Nanophotonics”
Within the framework of the section will pass four sessions devoted to the advanced researches and studies in the field of nanoelectronics, optoelectronics, nanophotonics, quantum nanostructures, MEMS&NEMS technology, organic and polymer based devices. Leading world experts will discuss latest achievements in these areas and their application in innovational industry. Experts of «Silicon Valley», large transnational innovative companies and leading Russian researchers will share their research experience. Reports will be delivered by 20 recognized leaders in the field from eight countries; also, a poster session will be held.
Co-chairmen:
- Alexander Aseev, Professor, RAS member; Director, A.V. Rzhanov Institute of Semiconductor Physics Siberian Department of Russian Academy of Science (Russia);
- Alexander Orlikovsky, Professor, RAS member; Director, Physics and Technologies Institute RAS (Russia);
- Sergey Bagaev, Professor, RAS member; Director, Institute of Laser Physics RAS (Russia);
- Anatoliy Dvurechenskii, Professor, RAS corresponding member; Deputy Director, A.V. Rzhanov Institute of Semiconductor Physics Siberian Department of Russian Academy of Science (Russia);
- Vladimir Razumov, Professor, RAS corresponding member; Deputy Director, Institute of Chemical Physics Problems RAS (Russia);
- Yu Jinzhong, Professor Semiconductor Institute of Chinese Science Academy (China).
13:40 - 15:00 Lunch
15:00 – 18:30, Hall J
Section 1 «Nanoelectronics, quantum nanostructures»
Moderator: Dvurechenskiy Anatoliy
Professor, RAS corresponding member; Deputy Director A.V. Rzhanov Institute of Semiconductor Physics Siberian Department of Russian Academy of Science Russia
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15.00 – 15.30 “Silicon Economics: View from Silicon Valley - last 10 years and beyond”
Viktor Boksha
Dr., Managing Director BG Partners USA
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15.30 – 16.00 “SOI based waveguide devices”
Yu Jinzhong
Professor Semiconductor Institute of Chinese Science Academy China
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16.00 – 16.30 “Selectable Multi Band UV- IR sensing with Nanostructures”
Perera Unil
Professor Georgia State University USA
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17.00 – 17.30 “Ultra Low Dielectric Constant Materials for 22 nm Technology Node and Beyond”
Mikhail Baklanov
Dr., Principal Researcher Interuniversity Microelectronics Center (IMEC) Belgium
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17.30 – 18.00 “IBM SiGe Solutions for the broad THz range”
David Bernstein
Program Manager of CEE Collaboration IBM Haifa Research Lab Israel
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18.00 – 18.30 “Sensors and filters on silicon based nano- and microchannel membranes for biomedical technologies”
Sergey Romanov
Dr. Senior Associate A.V. Rzhanov Institute of Semiconductor Physics Siberian Department of Russian Academy of Science Russia
10:00 – 13:00, Hall J
Section 2 «New devices and facilities in nanoelectronics and nanophotonics»
Moderator: Bagaev Sergey
Professor, RAS member; Director Institute of laser physics RAS Russia
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10.00 – 10.30 “Silicon Photonics”
Wim Bogaerts
Professor Interuniversity Microelectronics Center (IMEC) – Ghent University Belgium
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10.30 – 11.00 “Organic emitted devices with colloidal quantum dots”
Aleksey Vitukhnovsky
Professor, Head of the Department of Luminescence Lebedev Physical Institute RAS Russia
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11.00 – 11.30 “Photonic structures as optical nanoantennas”
Sergey Tikhodeev
Professor Prokhorov Institute of General Physics RAS Russia
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12.00 – 12.30 “New methods of highly efficient controlled generation of radiation by liquid crystal nanostructures in a wide spectral range including the THz one”
Sergey Trashkeev
Professor, Senior Associate Institute of Laser Physiscs SB RAS Russia
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12.30 – 13.00 “Single-molecule spectromicroscopy: toll for nanodiagnostics of solids”
Andrey Naumov
Professor, Head of the Department of Molecular Spectroscopy Institute of Spectroscopy RAS Russia
13:45 - 15:00 Lunch
15:00 – 18:00, Hall J
Section 3 «New devices and facilities in nanoelectronics and nanophotonics»
Moderator: Orlikovsky Alexander
Professor, RAS member; Director Physics and Technologies Institute of the RAS Russia
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15.00 – 15.30 “NEMS for sensing the world”
Jean-Philippe Polizzi
Professor Microsystems Program Manager, CEA-LETI/DIHS France
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15.30 – 16.00 "Development of emerging non-volatile memories and NVM technology transfer to production Fabs"
Yakov Roizin
Professor, Director “TowerJazz” Israel
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16.00 – 16.30 “Nanotransistors with ultrathin silicon and graphene channels”
Vladimir Viurkov
Dr., Senior Associate Physics and Technologies Institute RAS Russia
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17.00 – 17.30 “Tunnel resonance devices and super high-speed IS on their base”
Alexander Gorbatcevich
Professor, Leading Researcher Lebedev Physical Institute RAS Russia
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17.30 – 18.00 “Heteroepitaxial structures CdHgTe on GaAs and Si substrate for IR and terahertz detectors”
Maxim Yakushev
Dr. Senior Associate A.V. Rzhanov Institute of Semiconductor Physics Siberian Department of Russian Academy of Science Russia
10:00 – 12:30, Hall J
Section 4 «New materials and technologies in electronics and photonics, including organic and polymeric materials»
Moderator: Razumov Vladimir
Professor, RAS corresponding member; Deputy Director Institute of chemical physics problems of the RAS Russia
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10.00 – 10.30 “New trends and problems of organic light-emitting diodes (OLEDs)”
Karl Leo
Dr., Professor Institute of Applied PhotoPhysics, Dresden Germany
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10.30 – 11.00 “Polytronics of wideband materials”
Aleksey Lachinov
Professor, Laboratory Chief Institute of Molecule and Crystal Physics of Ufa Scientific Centre RAS Russia
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11.00 – 11.30 “New strategies in the material design for organic solar cells and field effect transistors”
Pavel Troshin
Professor Institute of Chemical Physics RAS Russia
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12.00 – 12.30 “Ultra-violet lasers based on nanobars of zinc oxide”
Alexander Gruzintcev
Professor, Laboratory Chief Institute of Microelectronics Technology and High Purity Materials RAS Russia
